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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1988 DESCRIPTION With TO-3PN package High collector-emitter voltage APPLICATIONS For audio frequency power amplifier and industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage IN Emitter-base voltage Collector current HAN C SEM GE Open base TC=25ae OND IC TOR UC VALUE -200 -200 -5 -7 -10 100 150 -55~150 ae ae UNIT V V V A A W Open collector Collector current-peak Collector power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-200V; IE=0 VEB=-3V; IC=0 IC=-1A ; VCE=-5V IC=-3.5A ; VCE=-5V IE=0 ; VCB=-10V,f=1MHz IC=-1A ; VCE=-5V 70 20 270 40 MIN TYP. -0.6 -1.3 2SA1988 SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT MAX -2.0 -2.0 -50 -50 200 UNIT V V |I |I A A pF MHz HAN INC SEM GE OND IC TOR UC 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1988 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1988 SEM GE HAN INC OND IC TOR UC 4 |
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